Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -0.5V(Max) @IC=-2A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

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ISC

无锡固电

Optocoupler with Phototriac Output

Description The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for h

文件：145.97 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Optocoupler with Phototriac Output

Description The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for h

文件：145.97 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

6-Pin DIP Random-Phase Optoisolators Triac Driver Output

6-Pin DIP Random-Phase Optoisolators Triac Driver Output (250 Volts Peak) The MOC3010 Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are designed for applications requiring isolated triac triggering, low–current isolated ac switchin

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MOTOROLA

摩托罗拉