Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 1.5V(Max) @IC= 1A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：311.63 Kbytes 页数：3 Pages

ISC

无锡固电

SMT 7 SEGMENT DISPLAY COMMON ANODE

文件：95.65 Kbytes 页数：1 Pages

Lumex

LAMBDAS INDUSTRIAL LMS SERIES

文件：371.94 Kbytes 页数：4 Pages

TDK

东电化

Shielded Power Inductors

Shielded Power Inductors • Very low DCR; excellent current handling • Only 0.8 mm tall; 3.0 × 3.0 mm footprint

文件：340.31 Kbytes 页数：2 Pages

COILCRAFT