RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) International Rectifier’s RAD-Hard TM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been

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RADIATION HARDENED POWER MOSFET

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have

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RADIATION HARDENED POWER MOSFET THRU-HOLE(T0-254AA)

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been c

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TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.087ohm, Id=35A*)

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have

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REPETITIVE AVALANCHE AND dv/dt RATED

400Volt, 0.22Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Internationa

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TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A)

RAD Hard™ HEXFET® TECHNOLOGY International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for b

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REPETITIVE AVALANCHE AND dv/dt RATED

International Rectifier’s RAD-HardTM HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effe

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TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)

N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 500 Volt, 0.51Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail ure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s R

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TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=18.8A)

500V N-CHANNEL Features: ■ Single Event effect (SEE) Hardened ■ Ultra Low RDS(on) ■ Low Total Gate Change ■ Proton Tolerant ■ Simple Drive Requirements ■ Ease of Paralleling ■ Hermetically Sealed ■ Light Weight

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TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)

600Volt, 0.60Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specificatio

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