Radiation Hardened Logic Level Power MOSFET Surface Mount (SMD-0.2) 250V, 3.2A, N-channel, R7 Technology

Features  5V CMOS and TTL compatible  Fast switching  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Hermetically sealed  Ceramic package  Surface mount  Light weight  ESD rating: Class 1B per MIL-STD-750, Method 1020 Potential Applicat

文件：602.91 Kbytes 页数：14 Pages

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英飞凌

Radiation Hardened Logic Level Power MOSFET Surface Mount (SMD-0.2) 250V, 3.2A, N-channel, R7 Technology

Features  5V CMOS and TTL compatible  Fast switching  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Hermetically sealed  Ceramic package  Surface mount  Light weight  ESD rating: Class 1B per MIL-STD-750, Method 1020 Potential Applicat

文件：602.91 Kbytes 页数：14 Pages

INFINEON

英飞凌

Radiation Hardened Logic Level Power MOSFET Surface Mount (SMD-0.2) 250V, 3.2A, N-channel, R7 Technology

Features  5V CMOS and TTL compatible  Fast switching  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Hermetically sealed  Ceramic package  Surface mount  Light weight  ESD rating: Class 1B per MIL-STD-750, Method 1020 Potential Applicat

文件：602.91 Kbytes 页数：14 Pages

INFINEON

英飞凌

Radiation Hardened Logic Level Power MOSFET Surface Mount (SMD-0.2) 250V, 3.2A, N-channel, R7 Technology

Features  5V CMOS and TTL compatible  Fast switching  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Hermetically sealed  Ceramic package  Surface mount  Light weight  ESD rating: Class 1B per MIL-STD-750, Method 1020 Potential Applicat

文件：602.91 Kbytes 页数：14 Pages

INFINEON

英飞凌

Radiation Hardened Logic Level Power MOSFET Surface Mount (SMD-0.2) 250V, 3.2A, N-channel, R7 Technology

Features  5V CMOS and TTL compatible  Fast switching  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Hermetically sealed  Ceramic package  Surface mount  Light weight  ESD rating: Class 1B per MIL-STD-750, Method 1020 Potential Applicat

文件：602.91 Kbytes 页数：14 Pages

INFINEON

英飞凌

Radiation Hardened Logic Level Power MOSFET Surface Mount (SMD-0.2) 250V, 3.2A, N-channel, R7 Technology

Features  5V CMOS and TTL compatible  Fast switching  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Hermetically sealed  Ceramic package  Surface mount  Light weight  ESD rating: Class 1B per MIL-STD-750, Method 1020 Potential Applicat

文件：602.91 Kbytes 页数：14 Pages

INFINEON

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TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)

600Volt, 0.60Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specificatio

文件：134.38 Kbytes 页数：4 Pages

IRF

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) International Rectifier’s RAD-HardTMHEXFET®technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been cha

文件：166.94 Kbytes 页数：8 Pages

IRF

RADIATION HARDENED POWER MOSFET THRU-HOLE

文件：488.18 Kbytes 页数：12 Pages

IRF

RADIATION HARDENED POWER MOSFET THRU-HOLE

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) International Rectifier’s RADHardTM HEXFET ® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been c

文件：444.14 Kbytes 页数：12 Pages

IRF