TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effec

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IRF

RADIATION HARDENED POWER MOSFET

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) 200V, P-CHANNEL International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These

文件：141.58 Kbytes 页数：8 Pages

IRF

TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)

International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effec

文件：128.74 Kbytes 页数：8 Pages

IRF

RADIATION HARDENED POWER MOSFET

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) 200V, P-CHANNEL International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These

文件：141.58 Kbytes 页数：8 Pages

IRF

Radiation Hardened Logic Level Power MOSFET Thru-Hole TO-205AF 250V, 3.3A, N-channel, R7 Technology

Features  5V CMOS and TTL compatible  Fast switching  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Light weight  Hermetically sealed  ESD rating: Class 1B per MIL-STD-750, Method 1020 Description IR HiRel R7 S-Line Logic Level Power MOSF

文件：634.45 Kbytes 页数：14 Pages

IRF

Radiation Hardened Logic Level Power MOSFET Thru-Hole TO-205AF 250V, 3.3A, N-channel, R7 Technology

Features  5V CMOS and TTL compatible  Fast switching  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Light weight  Hermetically sealed  ESD rating: Class 1B per MIL-STD-750, Method 1020 Description IR HiRel R7 S-Line Logic Level Power MOSF

文件：634.45 Kbytes 页数：14 Pages

IRF

Radiation Hardened Logic Level Power MOSFET Thru-Hole TO-205AF 250V, 3.3A, N-channel, R7 Technology

Features  5V CMOS and TTL compatible  Fast switching  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Light weight  Hermetically sealed  ESD rating: Class 1B per MIL-STD-750, Method 1020 Description IR HiRel R7 S-Line Logic Level Power MOSF

文件：634.45 Kbytes 页数：14 Pages

IRF

Radiation Hardened Logic Level Power MOSFET Thru-Hole TO-205AF 250V, 3.3A, N-channel, R7 Technology

Features  5V CMOS and TTL compatible  Fast switching  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Light weight  Hermetically sealed  ESD rating: Class 1B per MIL-STD-750, Method 1020 Description IR HiRel R7 S-Line Logic Level Power MOSF

文件：634.45 Kbytes 页数：14 Pages

IRF

Radiation Hardened Logic Level Power MOSFET Surface Mount (SMD-0.2) 250V, 3.2A, N-channel, R7 Technology

Features  5V CMOS and TTL compatible  Fast switching  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Hermetically sealed  Ceramic package  Surface mount  Light weight  ESD rating: Class 1B per MIL-STD-750, Method 1020 Potential Applicat

文件：602.91 Kbytes 页数：14 Pages

INFINEON

英飞凌

Radiation Hardened Logic Level Power MOSFET Surface Mount (SMD-0.2) 250V, 3.2A, N-channel, R7 Technology

Features  5V CMOS and TTL compatible  Fast switching  Single event effect (SEE) hardened  Low total gate charge  Simple drive requirements  Hermetically sealed  Ceramic package  Surface mount  Light weight  ESD rating: Class 1B per MIL-STD-750, Method 1020 Potential Applicat

文件：602.91 Kbytes 页数：14 Pages

INFINEON

英飞凌