REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

500Volt, 0.45Ω, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, Internat

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RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA) International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been char

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RADIATION HARDENED POWER MOSFET THRU-HOLE

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) International Rectifier’s RADHard HEXFET®technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been chara

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TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)

200 Volt, 0.8Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identicalpre- and post-radiation test conditions, Internationa

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TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)

International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects

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RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA) International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been char

文件：121.77 Kbytes 页数：8 Pages

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RADIATION HARDENED POWER MOSFET THRU-HOLE

RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) International Rectifier’s RADHard HEXFET®technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been chara

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been character ized for both Total Dose and Single Event Effect

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been character ized for both Total Dose and Single Event Effect

文件：320.37 Kbytes 页数：12 Pages

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR

400 Volt, 4.5Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specificatio

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