IRHM7250

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA) InternationalRectifier’sRAD-HardTMHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeen

IRHM7250

RADIATION HARDENED POWER MOSFET THRU-HOLE

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA) InternationalRectifier’sRAD-HardTMHEXFET®technologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshavebeen

IRHM7250

Simple Drive Requirements

IRHM7250SE

RADIATION HARDENED POWER MOSFET

RADIATIONHARDENEDPOWERMOSFETTHRU-HOLE(TO-254AA) InternationalRectifier’sRADHardTMHEXFET®MOSFETtechnologyprovideshighperformancepowerMOSFETsforspaceapplications.Thistechnologyhasoveradecadeofprovenperformanceandreliabilityinsatelliteapplications.Thesedeviceshave

IRHM7250_15

Simple Drive Requirements

IRHMJ7250

RADIATIONHARDENEDPOWERMOSFETSURFACEMOUNT(TO-254AATabless)

IRHMJ7250

SimpleDriveRequirements

IRHN7250

TRANSISTORN-CHANNEL(BVdss=200V,Rds(on)=0.10ohm,Id=26A)

200Volt,0.10Ω,MEGARADHARDHEXFET InternationalRectifier’sMEGARADHARDtechnologyHEXFETpowerMOSFETsdemonstrateexcellentthresholdvoltagestabilityandbreakdownvoltagestabilityattotalradiationdosesashighas1x106Rads(Si).Underidenticalpre-andpost-radiationtestcondi

IRHN7250

RadiationHardenedPowerMOSFETSurfaceMount(SMD-1)200V,26A,N-channel,RadHardHEXFET™Technology

Features Singleeventeffect(SEE)hardened LowRDS(on) Lowtotalgatecharge Simpledriverequirements Hermeticallysealed Electricallyisolated Ceramiceyelets Lightweight SurfaceMount ESDrating:Class3AperMIL-STD-750,Method1020 PotentialApplications 

IRHN7250

SimpleDriveRequirements