Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.)

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 17A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) • Fast Switching

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ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

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ISC

无锡固电

Power MOSFET(Vdss=400V, Rds(on)=0.30ohm, Id=16A)

Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. The

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IRF

Power MOSFET

文件：1.98549 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

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