Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.)

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FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 17A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) • Fast Switching

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ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

SWITCHMODE??Power Rectifirers DPAK Surface Mount Package

SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

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MOTOROLA

摩托罗拉

SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS 15 WATTS

High Voltage Power Transistors DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic

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MOTOROLA

摩托罗拉

0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS

Plastic Medium Power NPN Silicon Transistor . . . designed for use in line–operated applications such as low power, line–operated series pass and switching regulators requiring PNP capability. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc • Ex

文件：124.05 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉