Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applica

文件：1.52055 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Thir

文件：836.78 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=2.6A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

文件：170.19 Kbytes 页数：6 Pages

IRF

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Thir

文件：836.78 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applica

文件：1.52055 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

文件：963 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=2.6A)

Infineon

英飞凌

MOSFET N-CH400V HEXFET MOSFET

Vishay

威世