首页 >IRFI630GPBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
BalancedModulator/Demodulator PRODUCTDESCRIPTION TheAD630isahighprecisionbalancedmodulatorthatcombinesaflexiblecommutatingarchitecturewiththeaccuracyandtemperaturestabilityaffordedbylaserwafertrimmedthinfilmresistors.Itssignalprocessingapplicationsincludebalancedmodulationanddemodulation | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
BalancedModulator/Demodulator | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | AD | ||
N-CHANNELMOSFETinaTO-220FPlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | etc2 | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10㎂(Max.)@VDS=200V LowRDS(ON):0.333(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •9.0A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical22nC) •LowCrss(typical22pF) •Fastswitching •100av | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •9.0A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical22nC) •LowCrss(typical22pF) •Fastswitching •100av | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •9.0A,200V,RDS(on)=0.4Ω@VGS=10V •Lowgatecharge(typical22nC) •LowCrss(typical22pF) •Fastswitching •100av | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET(Vdss=200V,RdS(on)=0.40ohm,Id=9.0A) VDSS=200V RDS(on)=0.40Ω ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET VDS(V)200V RDS(on)(Ω)VGS=5V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •150°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •150°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | Vishay | ||
HEXFETPowerMosfet | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedPowerMOSFET BVDSS=200V RDS(on)=0.4Ω ID=9A FEATURES ♦Logic-LevelGateDrive ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):0.335Ω | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
HEXFET짰PowerMOSFET VDSS=200V RDS(on)=0.40Ω ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET VDS(V)200V RDS(on)(Ω)VGS=5V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes | VishayVishay Siliconix 威世科技 | Vishay |
详细参数
- 型号：
IRFI630GPBF
- 功能描述：
MOSFET N-Chan 200V 5.9 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
24+ |
TO-220-3 |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
VISHAY/威世 |
2024+实力库存 |
TO-220 |
11 |
只做原厂渠道 可追溯货源 |
询价 | ||
VISHAY |
2016+ |
TO-220F |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
VISHAY |
23+ |
TO220 |
7750 |
全新原装优势 |
询价 | ||
IR |
TO220 |
900 |
正品原装--自家现货-实单可谈 |
询价 | |||
Vishay |
18+ |
NA |
3424 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
IR |
2018+ |
TO220 |
30617 |
一级代理全新原装热卖 |
询价 | ||
IR |
22+23+ |
TO-220F |
16173 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
23+ |
TO-TO-220F |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
VIS |
2020+ |
TO-220F |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 |
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