Advanced Power MOSFET

BVDSS = 200 V RDS(on) = 0.4Ω ID = 9 A FEATURES ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.335Ω

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

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ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

HEXFET짰 Power MOSFET

VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all comme

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IRF

Power MOSFET

VDS (V) 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivenes

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VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable o

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IRF