P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

文件：508.31 Kbytes 页数：12 Pages

Samsung

三星

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliablility

文件：381.33 Kbytes 页数：6 Pages

Samsung

三星

P-CHANNEL POWER MOSFETS

Description The IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, and RF1S9540SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect tran

文件：424.12 Kbytes 页数：7 Pages

HARRIS

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -19A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.76 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：280.74 Kbytes 页数：2 Pages

ISC

无锡固电