Power MOSFET

FEATURES • Surface-mount • Available in tape and reel • Dynamic dV/dt rating • P-channel • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides informa

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VISHAYVishay Siliconix

威世威世科技公司

HEXFET POWER MOSFET

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IRF

Power MOSFET

文件：819.06 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • P-channel • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESC

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VISHAYVishay Siliconix

威世威世科技公司