IRFI9530G

PowerMOSFET(Vdss=-100V,Rds(on)=0.30ohm,Id=-7.7A)

IRFI9530G

PowerMOSFET

FEATURES •Isolatedpackage •Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) •Sinktoleadcreepagedistance=4.8mm •P-channel •175°Coperatingtemperature •DynamicdV/dtrating •Lowthermalresistance •Materialcategorization:fordefinitionsofcompliance pleasesee

IRFI9530G

P-ChannelMOSFET

FEATURES ·DrainCurrent-ID=-7.7A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

IRFI9530GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

IRFI9530GPBF

HEXFETPowerMOSFET

IRFI9530GPBF

P-Channel100V(D-S)MOSFET

IRFP9530

iscP-ChannelMOSFETTransistor

IRFS9530

iscP-ChannelMOSFETTransistor

IRFS9530

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

KMB9530

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)