isc P-Channel MOSFET Transistor

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ISC

无锡固电

isc P-Channel MOSFET Transistor

文件：271.03 Kbytes 页数：2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -12A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

Advanced high cell denity trench technology for ultra RDS(ON)

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