Advanced Process Technology

Description These HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 pa

文件：194.6 Kbytes 页数：9 Pages

IRF

High frequency DC-DC converters

Benefits ● Low Gate to Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件：133.78 Kbytes 页数：8 Pages

IRF

N-Channel 60-V (D-S) MOSFET

文件：1.88222 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

FRICTION LOCK HEADER ASY .100 CL BENT SQ PINS 7478 SERIES DWG

文件：391.91 Kbytes 页数：3 Pages

MOLEX

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