Power MOSFET(Vdss=20V, Rds(on)=0.135ohm)

VDSS =20V RDS(on) = 0.135Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Powe

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20V 双 N 通道 HEXFET Power MOSFET, 采用 Micro 8封装

\n优势:\n• 符合 RoHS\n• 快速开关\n• 纤薄外形（小于1.1毫米）\n• 双 N 通道 MOSFET;

Infineon

英飞凌

Generation V Technology Ulrtra Low On-Resistance

VDSS =20V RDS(on) = 0.135Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Powe

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IRF

Ulrtra Low On-Resistance

文件：184.07 Kbytes 页数：9 Pages

IRF

Ulrtra Low On-Resistance

文件：184.07 Kbytes 页数：9 Pages

IRF

Generation V Technology

文件：184.07 Kbytes 页数：9 Pages

IRF