Generation V Technology Ulrtra Low On-Resistance

VDSS =20V RDS(on) = 0.135Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Powe

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IRF

Ulrtra Low On-Resistance

文件：184.07 Kbytes 页数：9 Pages

IRF

Ulrtra Low On-Resistance

文件：184.07 Kbytes 页数：9 Pages

IRF

Low -Power, Monolithic, CMOS Analog Multiplexers

Low -Power, Monolithic, CMOS Analog Multiplexers Applications     Control Systems     Data Logging Systems     Aircraft Heads-up Displays     Data Acquisition Systems     Signal Routing     Portable Equipment

文件：246.34 Kbytes 页数：8 Pages

MAXIM

美信

LINE-DRIVER FOR DIGITAL CARRADIO SIGNAL PROCESSOR

Description The line driver handles all analog input and output signals for the digital car radio signal processor TDA7501. The device contains four independent input multiplexers to select the sources for the DSPs four AD converters. Four additional gain stages allow an adaptation to run the ADC

文件：148.06 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case

Description The TSTS750. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their flat glass windows make them ideal for use with external optics. Features ● Suitable for pulse operation ● Wide angle of half intensity ϕ = ± 30
● Peak wavel

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VISHAYVishay Siliconix

威世威世科技公司