Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：116.88 Kbytes 页数：8 Pages

IRF

采用 Micro 8 封装的 20V 单 N 沟道功率 MOSFET

IR MOSFET 系列产品采用成熟的硅工艺，为设计人员提供了丰富的器件组合，以支持各种应用，例如直流电机、逆变器、SMPS、照明、负载开关以及电池供电应用等。这些器件拥有各种表贴封装装和通孔封装产品，都是行业标准封装，便于设计。 • 适用于宽 SOA 的平面单元结构\n• 针对分销合作伙伴的广泛可用性进行了优化\n• 产品符合 JEDEC 标准\n• 针对低于 <100kHz 开关应用进行了硅优化\n• 薄型封装（小于 1.1 毫米）;

Infineon

英飞凌

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：214.35 Kbytes 页数：8 Pages

IRF

Generation V Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：119.4 Kbytes 页数：8 Pages

IRF

ULTRA LOW ON RESISTANCE

文件：214.35 Kbytes 页数：8 Pages

IRF

ULTRA LOW ON RESISTANCE

文件：214.35 Kbytes 页数：8 Pages

IRF