Power MOSFET(Vdss=20V, Rds(on)=0.030ohm)

Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer wi

文件：83.6 Kbytes 页数：8 Pages

IRF

20V 双 N 通道 HEXFET Power MOSFET, 采用 Micro 8封装

\n优势:\n• 符合 RoHS\n• 快速开关\n• 纤薄外形（小于1.1毫米）\n• 双 N 通道 MOSFET;

Infineon

英飞凌

Ultra Low On-Resistance

文件：152.67 Kbytes 页数：8 Pages

IRF

Trench Technology

文件：152.67 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

文件：147.24 Kbytes 页数：8 Pages

IRF

Ultra Low On-Resistance

文件：152.67 Kbytes 页数：8 Pages

IRF

Trench Technology

文件：105.71 Kbytes 页数：8 Pages

IRF

Trench Technology

文件：152.67 Kbytes 页数：8 Pages

IRF