首页 >IRF7607PBF>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF7607PBF | HEXFET Power MOSFET Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi 文件：144.23 Kbytes 页数：8 Pages | IRF | IRF | |
IRF7607PBF | Ultra Low On-Resistance 文件：149.67 Kbytes 页数：8 Pages | IRF | IRF | |
Ultra Low On-Resistance 文件：149.67 Kbytes 页数：8 Pages | IRF | IRF | ||
Trench Technology Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer wi 文件：149.67 Kbytes 页数：8 Pages | IRF | IRF | ||
HEXFET Power MOSFET 文件：80.55 Kbytes 页数：2 Pages | KEXIN 科信电子 | KEXIN | ||
High Voltage Linear LED Driver 文件：97.45 Kbytes 页数：1 Pages | MAXIC 美芯晟 | MAXIC |
详细参数
- 型号：
IRF7607PBF
- 功能描述：
MOSFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
MSOP8 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
IR |
23+ |
MSOP8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
21+ |
MSOP8 |
10000 |
原装现货假一罚十 |
询价 | ||
IR |
22+ |
MSOP8 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
24+ |
NA/ |
6610 |
原装现货,当天可交货,原型号开票 |
询价 | ||
INTERNATIONAL RECTIFIER |
2023+ |
SMD |
3360 |
安罗世纪电子只做原装正品货 |
询价 | ||
IR |
23+ |
MSOP8 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
MSOP8 |
7000 |
询价 | |||
IR |
24+ |
MSOP8 |
60000 |
询价 | |||
IR |
24+ |
MSOP8 |
22055 |
郑重承诺只做原装进口现货 |
询价 |
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