Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET

Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer wi

文件：151.35 Kbytes 页数：7 Pages

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