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IRF7706

Power MOSFET(Vdss=-30V)

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

文件:152.96 Kbytes 页数:8 Pages

IRF

IRF7706

Power MOSFET(Vdss=-30V)

Infineon

英飞凌

IRF7706GPBF

HEXFET짰 Power MOSFET

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

文件:240.93 Kbytes 页数:8 Pages

IRF

IRF7706PBF

Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

文件:244.33 Kbytes 页数:8 Pages

IRF

IRF7706TRPBF

Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

文件:244.33 Kbytes 页数:8 Pages

IRF

IRF7706GPBF

HEXFET® Power MOSFET

Infineon

英飞凌

详细参数

  • 型号:

    IRF7706

  • 功能描述:

    MOSFET P-CH 30V 7A 8-TSSOP

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    HEXFET®

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
IR
21+
TSSOP8
6000
全新原装 公司现货 价格优
询价
IOR
25+23+
TSSOP8
30099
绝对原装正品全新进口深圳现货
询价
IR
18+
TSOP8
85600
保证进口原装可开17%增值税发票
询价
IR
1709+
TSSOP-8
32500
普通
询价
IR
23+
TSSOP8
50000
全新原装正品现货,支持订货
询价
INFINEON
25+
SSOP-8
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
IOR
21+
TSSOP8
10000
原装现货假一罚十
询价
Infineon Technologies
22+
8TSSOP
9000
原厂渠道,现货配单
询价
Infineon Technologies
23+
8TSSOP
9000
原装正品,支持实单
询价
更多IRF7706供应商 更新时间2025-10-4 9:31:00