IRF7706中文资料IRF数据手册PDF规格书
IRF7706规格书详情
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45 less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (
• Ultra Low On-Resistance
• P-Channel MOSFET
• Very Small SOIC Package
• Low Profile (< 1.2mm)
• Available in Tape & Reel
产品属性
- 型号:
IRF7706
- 功能描述:
MOSFET P-CH 30V 7A 8-TSSOP
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
4250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IOR |
25+23+ |
TSSOP8 |
30099 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
16+ |
TSSOP-8 |
3513 |
询价 | |||
IR |
22+ |
TSSOP8 |
5000 |
全新原装现货!自家库存! |
询价 | ||
IR |
2016+ |
SOP8 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 | ||
IR |
17+ |
MSOP8 |
6200 |
100%原装正品现货 |
询价 | ||
IR |
25+ |
TSSOP-8 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
23+ |
TSSOP8 |
20000 |
原装正品,假一罚十 |
询价 | ||
IR |
18+ |
TSOP8 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
IR |
23+ |
TSSOP8. |
8000 |
专注配单,只做原装进口现货 |
询价 |