HEXFET

Power MOSFET Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

文件：244.54 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

文件：156.01 Kbytes 页数：9 Pages

IRF

HEXFET® Power MOSFET

● Ultra Low On-Resistance ● Dual N-Channel MOSFET ● Very Small SOIC Package ● Low Profile (

文件：132.14 Kbytes 页数：9 Pages

Infineon

英飞凌

LOW DROPOUT VOLTAGE REGULATOR

GENERAL DISCRIPTION NJU7757/58 is a low dropout voltage regulator control. Advanced CMOS technology achieves low quiescent SC-82AB package and 0.1uF small output capacitor NJU7757/58 suitable for space conscious applications. NJU7758 features shunt switch which improves turn of output volta

文件：104.68 Kbytes 页数：4 Pages

NJRC

日本无线