N-Channel Enhancement Mode Power MOSFET

Features  VDS= 20V, ID= 10 A RDS(ON)

文件：1.7673 Mbytes 页数：5 Pages

BYCHIP

百域芯

Control FET for Notebook Processor Power

文件：220.06 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

文件：256.87 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power

文件：168.71 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • High Frequency Synchronous Buck Converters For Computer Processor Power • FEATURES • Static drain-source on-resistance: RDS(on)≤13.8mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.32 Kbytes 页数：2 Pages

ISC

无锡固电