HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power

文件：168.71 Kbytes 页数：11 Pages

IRF

N-Channel MOSFET Transistor

• DESCRITION • High Frequency Synchronous Buck Converters For Computer Processor Power • FEATURES • Static drain-source on-resistance: RDS(on)≤13.8mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.32 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● Lead-Free

文件：294.67 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● Lead-Free

文件：264.82 Kbytes 页数：11 Pages

IRF

Ultra-Low Gate Impedance

文件：273.78 Kbytes 页数：12 Pages

IRF

Ultra-Low Gate Impedance

文件：273.78 Kbytes 页数：12 Pages

IRF

Ultra-Low Gate Impedance

文件：273.78 Kbytes 页数：12 Pages

IRF

采用 D-Pak 封装的 30V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 低RDS(ON) @ 4.5V VGS\n• 经过充分验证的雪崩电压和电流\n• 超低的栅极阻抗\n• 逻辑电平;

Infineon

英飞凌

HEXFET Power MOSFET

Infineon

英飞凌

MOSFET N-CH 30V 43A DPAK

Infineon

英飞凌