N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-CHANNEL POWER MOSFETS

FEATURES ● Lower RDS(ON) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Lower input capacitance ● Extended safe operating area ● Improved high temperature reliability

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Samsung

三星

2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching

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Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for commercial-industrial applications at power dissipation lev

文件：562.15 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

20A 600V N CHANNEL POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy effic

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FCI

富加宜

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

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Motorola

摩托罗拉

Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling •

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IRF

isc N-Channel MOSFET Transistor

DESCRIPTION · Drain Current –ID= 2.5A@ TC=25℃ · Drain Source Voltage- : VDSS= 500V(Min) · Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max) · Fast Switching Speed · Simple Drive Requirements APPLICATIONS · High current,high speed switching · Swith mode power supplies(smps) ·

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ISC

无锡固电

POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff

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SUNTAC

N - CHANNEL 500V - 2.5ohm - 2.5 A - TO-220 PowerMESH] MOSFET

DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources. ■ TYPICAL RDS(on) = 2.5 Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ 100 AVALAN

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STMICROELECTRONICS

意法半导体