MOSFET N 500V 2.5A 3,000 OHM

FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switchin

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SYC

SEMICONDUCTORS

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etc2List of Unclassifed Manufacturers

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N-Channel Power MOSFETs

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ARTSCHIP

Power MOSFET

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VishayVishay Siliconix

威世科技

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Fast switching;

Vishay

威世科技

N-CHANNEL POWER MOSFETS

ONSEMI

安森美半导体

Mosfet

FCI

富加宜

POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff

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SUNTAC

POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff

文件：217.3 Kbytes 页数：5 Pages

SUNTAC

POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff

文件：217.3 Kbytes 页数：5 Pages

SUNTAC