POWER MOSFET

GENERAL DESCRIPTION This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy eff

文件：217.3 Kbytes 页数：5 Pages

SUNTAC

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

文件：240.92 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Cu

文件：100.33 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Low RDS(on) = 2.0Ω ( TYP) • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

文件：202.74 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanch

文件：133.58 Kbytes 页数：10 Pages

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：242.26 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

文件：168.5 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

文件：168.5 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V

文件：272.54 Kbytes 页数：10 Pages

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

文件：240.92 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司