Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Material categorization: for definitions of compliance please see www.

文件：242.26 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanch

文件：133.58 Kbytes 页数：10 Pages

IRF

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

文件：168.5 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS)

文件：168.5 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

HEXFET Power MOSFET

Applications • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High speed power switching • Lead-Free Benefits • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness • Fully Characterized Capacitance and Avalanche V

文件：272.54 Kbytes 页数：10 Pages

IRF

Power MOSFET

文件：242.26 Kbytes 页数：11 Pages

VishayVishay Siliconix

威世

Power MOSFET

Low Gate Charge Qg Results in Simple Drive Requirement\nImproved Gate, Avalanche and Dynamic dV/dt Ruggedness\nFully Characterized Capacitance and Avalanche Voltage and Current;

Vishay

威世

Power MOSFET(Vdss=500V, Rds(on)max=3.0ohm, Id=2.5A)

Infineon

英飞凌