Power MOSFET

FEATURES • Low Gate Charge QgResults in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available  

文件：969.36 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

SMPS MOSFET Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and dynamic dv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Effective Coss specified ( See AN 1001) Applications ● Switch Mode Power Su

文件：161.59 Kbytes 页数：8 Pages

IRF

Low Gate Charge Qg Results in Simple Drive Requirement

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Su

文件：3.49044 Mbytes 页数：7 Pages

KERSEMI

Power MOSFET

文件：258.649 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：258.649 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

MOSFET RECOMMENDED ALT 844-IRF830A

Vishay

威世