首页 >IRF7807VD1PBF>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF7807VD1PBF | HEXFET Power MOSFET Description The FETKY™ family of Co-Pack HEXFET® MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance 文件：1.14942 Mbytes 页数：9 Pages | IRF | IRF | |
IRF7807VD1PBF | LOW CONDUCTION LOSSES 文件：1.15469 Mbytes 页数：9 Pages | IRF | IRF | |
LOW CONDUCTION LOSSES 文件：1.15469 Mbytes 页数：9 Pages | IRF | IRF | ||
Industry-standard pinout SO-8 Package 文件：238.95 Kbytes 页数：9 Pages | IRF | IRF | ||
Industry-standard pinout SO-8 Package 文件：238.95 Kbytes 页数：9 Pages | IRF | IRF | ||
IRF7807VD1PBF | LOW CONDUCTION LOSSES | Infineon 英飞凌 | Infineon | |
Industry-standard pinout SO-8 Package | Infineon 英飞凌 | Infineon |
详细参数
- 型号：
IRF7807VD1PBF
- 功能描述：
MOSFET FETKY 30V VBRDSS 25mOhms 9.5nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
SOIC8 |
19901 |
原装正品,假一罚十 |
询价 | ||
IR |
2016+ |
SOP8 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
25+ |
SOIC8 |
2789 |
原装优势!绝对公司现货! |
询价 | ||
IR |
2026+ |
SOIC8 |
36375 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
IR |
24+ |
65230 |
询价 | ||||
IR |
2447 |
SOIC8 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
INFINEON |
25+ |
SOP-8 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IR |
24+ |
SOIC8 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
询价 |
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