HEXFET

Power MOSFET Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr

文件：250.91 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

文件：198.13 Kbytes 页数：9 Pages

IRF

Precision, CMOS Input, RRIO, Wide Supply Range Amplifiers

文件：1.40185 Mbytes 页数：22 Pages

NSC

国半

Precision, CMOS Input, RRIO, Wide Supply Range Amplifiers

文件：1.4439 Mbytes 页数：44 Pages

TI

德州仪器