Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

文件：239.91 Kbytes 页数：8 Pages

IRF

Ultra Low On-Resistance

文件：239.91 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Low Noise Negative Bias Generator

文件：410.2 Kbytes 页数：16 Pages

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文件：1.37674 Mbytes 页数：22 Pages

TI

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Low Noise Negative Bias Generator

文件：410.2 Kbytes 页数：16 Pages

NSC

国半