HEXFET® Power MOSFET

● Ultra Low On-Resistance ● Dual N-Channel MOSFET ● Very Small SOIC Package ● Low Profile (

文件：132.14 Kbytes 页数：9 Pages

INFINEON

英飞凌

Power MOSFET(Vdss=20V)

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

文件：132.27 Kbytes 页数：9 Pages

IRF

Power MOSFET(Vdss=20V)

Infineon

英飞凌

HEXFET

Power MOSFET Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

文件：244.54 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

文件：156.01 Kbytes 页数：9 Pages

IRF

HEXFET® Power MOSFET

● Ultra Low On-Resistance ● Dual N-Channel MOSFET ● Very Small SOIC Package ● Low Profile (

文件：132.14 Kbytes 页数：9 Pages

INFINEON

英飞凌