IRF7757中文资料英飞凌数据手册PDF规格书

● Ultra Low On-Resistance

● Dual N-Channel MOSFET

● Very Small SOIC Package

● Low Profile (< 1.2mm)

● Available in Tape & Reel

● Common Drain Configuration

描述 Description

HEXFET® Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device

for battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.2mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards