IRF7756中文资料PDF规格书
IRF7756规格书详情
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extremely efficient and reliable device for battery and load management.
The TSSOP-8 package has 45 less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (
● Ultra Low On-Resistance
● Dual P-Channel MOSFET
● Very Small SOIC Package
● Low Profile (< 1.2mm)
● Available in Tape & Reel
产品属性
- 型号:
IRF7756
- 功能描述:
MOSFET 2P-CH 12V 4.3A 8-TSSOP
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 阵列
- 系列:
HEXFET®
- 产品目录绘图:
8-SOIC Mosfet Package
- 标准包装:
1
- 系列:
- FET
- 型:
2 个 N 沟道(双) FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
60V 电流 - 连续漏极(Id) @ 25°
- C:
3A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
75 毫欧 @ 4.6A,10V Id 时的
- Vgs(th)(最大):
3V @ 250µA 闸电荷(Qg) @
- Vgs:
20nC @ 10V 输入电容(Ciss) @
- Vds:
- 功率 -
- 最大:
1.4W
- 安装类型:
表面贴装
- 封装/外壳:
PowerPAK? SO-8
- 供应商设备封装:
PowerPAK? SO-8
- 包装:
Digi-Reel®
- 产品目录页面:
1664(CN2011-ZH PDF)
- 其它名称:
SI7948DP-T1-GE3DKR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
23+ |
8TSSOP |
9000 |
原装正品,支持实单 |
询价 | ||
IR |
2022 |
TSSOP8 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IR |
23+ |
NA/ |
6900 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IOR |
23+ |
1057 |
2517 |
全新原装现货 |
询价 | ||
IR |
22+ |
TSSOP8 |
10350 |
原装现货假一赔十 |
询价 | ||
Infineon Technologies |
21+ |
8-TSSOP |
4000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
IR |
20+ |
TSSOP8 |
6900 |
诚信经营..品质保证..价格优势 |
询价 | ||
IR |
22+ |
MSOP-8 |
25000 |
只有原装绝对原装,支持BOM配单! |
询价 | ||
IOR |
22+23+ |
TSSOP8 |
33572 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IOR |
TSSOP8 |
68900 |
原包原标签100%进口原装常备现货! |
询价 |