Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an ex

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IRF

15 AMP 24V INPUT ?쏝IG-HAMMER III??PROGRAMMABLE ISR

文件：196.9 Kbytes 页数：3 Pages

TI

德州仪器

15 AMP 24V INPUT ?쏝IG-HAMMER III??PROGRAMMABLE ISR

文件：196.9 Kbytes 页数：3 Pages

TI

德州仪器

15 AMP 24V INPUT ?쏝IG-HAMMER III??PROGRAMMABLE ISR

文件：196.9 Kbytes 页数：3 Pages

TI

德州仪器