IRF7702PBF技术资料参数贸易商国半IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF7702PBF	文件：184.83 Kbytes Page：8 Pages	HEXFET Power MOSFET Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr 文件：184.83 Kbytes 页数：8 Pages	IRF	IRF
IRF7702TR	文件：144.31 Kbytes Page：8 Pages	Ultra Low On-Resistance Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr 文件：144.31 Kbytes 页数：8 Pages	IRF	IRF
IRF7702TRPBF	文件：190.31 Kbytes Page：8 Pages	Ultra Low On-Resistance Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for,provides thedesigner with an extr 文件：190.31 Kbytes 页数：8 Pages	IRF	IRF
LMP7702	文件：1.40185 Mbytes Page：22 Pages	Precision, CMOS Input, RRIO, Wide Supply Range Amplifiers 文件：1.40185 Mbytes 页数：22 Pages	NSC 国半	NSC

更多IRF7702PBF供应商更新时间2025-12-22 14:02:00