IRF7701GPBF资料datasheet下载供应商报价-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF7701GPBF	文件：241.74 Kbytes Page：9 Pages	HEXFET짰 Power MOSFET Ultra Low On-Resistance Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex 文件：241.74 Kbytes 页数：9 Pages	IRF	IRF
IRF7701PBF	文件：204.94 Kbytes Page：9 Pages	Ultra Low On-Resistance Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex 文件：204.94 Kbytes 页数：9 Pages	IRF	IRF
IRF7701TR	文件：153.32 Kbytes Page：9 Pages	Ultra Low On-Resistance Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex 文件：153.32 Kbytes 页数：9 Pages	IRF	IRF
LMP7701	文件：485.82 Kbytes Page：6 Pages	Precision, CMOS Input, RRIO, Wide Supply Range Amplifier 文件：485.82 Kbytes 页数：6 Pages	NSC 国半	NSC

更多IRF7701GPBF供应商更新时间2026-2-2 9:53:00