HEXFET짰 Power MOSFET Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex

文件：241.74 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex

文件：204.94 Kbytes 页数：9 Pages

IRF

Ultra Low On-Resistance

Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International Rectifier is well known for, provides thedesigner with an ex

文件：153.32 Kbytes 页数：9 Pages

IRF

Precision, CMOS Input, RRIO, Wide Supply Range Amplifier

文件：485.82 Kbytes 页数：6 Pages

NSC

国半