Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm)

Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer wi

文件：77.37 Kbytes 页数：7 Pages

IRF

Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET

Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer wi

文件：151.35 Kbytes 页数：7 Pages

IRF

Trench Technology

Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer wi

文件：82.93 Kbytes 页数：7 Pages

IRF

HEXFET Power MOSFET

文件：81.75 Kbytes 页数：2 Pages

KEXIN

科信电子

PHS MULTI-FUNCTION GaAs MMIC

文件：538.39 Kbytes 页数：16 Pages

NJRC

日本无线

InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION

文件：957.45 Kbytes 页数：6 Pages

CEL