Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)

VDSS = 30V RDS(on) = 0.135Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

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IRF

30V 双 N 通道 HEXFET Power MOSFET, 采用 Micro 8封装

\n优势:\n• 符合 RoHS\n• 快速开关\n• 纤薄外形（小于1.1毫米）\n• 双 N 通道 MOSFET;

Infineon

英飞凌

HEXFET짰 Power MOSFET

VDSS = 30V RDS(on) = 0.135Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

文件：1.00898 Mbytes 页数：8 Pages

IRF

Generation V Technology

VDSS = 30V RDS(on) = 0.135Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

文件：117.23 Kbytes 页数：8 Pages

IRF

ULTRA LOW ON RESISTANCE

文件：1.01427 Mbytes 页数：8 Pages

IRF

ULTRA LOW ON RESISTANCE

文件：1.01427 Mbytes 页数：8 Pages

IRF