IRF7503

Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)

VDSS=30V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF7503

30V 双 N 通道 HEXFET Power MOSFET, 采用 Micro 8封装; \n优势:\n• 符合 RoHS\n• 快速开关\n• 纤薄外形（小于1.1毫米）\n• 双 N 通道 MOSFET\n;

IRF7503PBF

HEXFET짰 Power MOSFET

VDSS=30V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF7503TR

Generation V Technology

VDSS=30V RDS(on)=0.135Ω Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPow

IRF7503PBF

ULTRA LOW ON RESISTANCE

IRF7503PBF_15

ULTRA LOW ON RESISTANCE