IRF7503TR中文资料PDF规格书
IRF7503TR规格书详情
VDSS = 30V
RDS(on) = 0.135Ω
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a
premium. The low profile (
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
产品属性
- 型号:
IRF7503TR
- 功能描述:
MOSFET 2N-CH 30V 2.4A MICRO8
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 阵列
- 系列:
HEXFET®
- 产品目录绘图:
8-SOIC Mosfet Package
- 标准包装:
1
- 系列:
- FET
- 型:
2 个 N 沟道(双) FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
60V 电流 - 连续漏极(Id) @ 25°
- C:
3A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
75 毫欧 @ 4.6A,10V Id 时的
- Vgs(th)(最大):
3V @ 250µA 闸电荷(Qg) @
- Vgs:
20nC @ 10V 输入电容(Ciss) @
- Vds:
- 功率 -
- 最大:
1.4W
- 安装类型:
表面贴装
- 封装/外壳:
PowerPAK? SO-8
- 供应商设备封装:
PowerPAK? SO-8
- 包装:
Digi-Reel®
- 产品目录页面:
1664(CN2011-ZH PDF)
- 其它名称:
SI7948DP-T1-GE3DKR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IOR |
20+ |
MSOP8 |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
询价 | ||
IR |
22+ |
MSOP-8 |
360000 |
进口原装房间现货实库实数 |
询价 | ||
INFINEON |
2019 |
8-TSSOP |
55000 |
原装进口假一罚十 |
询价 | ||
IR |
22+ |
NA |
30000 |
原装现货假一罚十 |
询价 | ||
IR |
2016+ |
TSSOP8 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
IR |
22+23+ |
MSOP8 |
28053 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
22+ |
8MSOP |
2560 |
绝对原装!现货热卖! |
询价 | ||
IR |
2024+实力库存 |
MSOP-8 |
3063 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR |
23+ |
NA/ |
2686 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
23+ |
MSOP-8 |
50000 |
全新原装正品现货,支持订货 |
询价 |