Power MOSFET(Vdss=-30V, Rds(on)=0.27ohm)

VDSS = -30V RDS(on) = 0.27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

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HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)

VDSS = -30V RDS(on) = 0.27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

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-30V 双 P 通道 HEXFET Power MOSFET, 采用 Micro 8封装

\n优势:\n• 符合 RoHS\n• 快速开关\n• 纤薄外形（小于1.1毫米）\n• 双 P 通道 MOSFET;

Infineon

英飞凌

HEXFET Power MOSFET (VDSS=-30V , RDS(on)=O.27ohm)

VDSS = -30V RDS(on) = 0.27Ω Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Pow

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ULTRA LOW ON RESISTANCE

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ULTRA LOW ON RESISTANCE

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Generation V Technology

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