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IRF730	文件：365.66 Kbytes Page：6 Pages	6.0A,400V,1.0廓N-CHANNELPOWERMOSFET DESCRIPTION ➤IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecov	FS First Silicon Co., Ltd	FS
IRF730B	文件：293.32 Kbytes Page：8 Pages	LowAreaSpecificOn-Resistance FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry	VishayVishay Siliconix 威世科技	Vishay
IRF730B	文件：3.10167 Mbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF730B	文件：201.45 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent–ID=5.5A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowers	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF730B	文件：898.57 Kbytes Page：10 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRF730B	文件：173.28 Kbytes Page：8 Pages	DSeriesPowerMOSFET FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit(	VishayVishay Siliconix 威世科技	Vishay
IRF730F	文件：365.66 Kbytes Page：6 Pages	6.0A,400V,1.0廓N-CHANNELPOWERMOSFET DESCRIPTION ➤IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecov	FS First Silicon Co., Ltd	FS
IRF730FI	文件：65.269 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent–ID=3.5A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersu	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF730FP	文件：451.94 Kbytes Page：3 Pages	6.0A400VNCHANNELPOWERMOSFET	FCI Amphenol ICC	FCI
IRF730PBF	文件：1.17645 Mbytes Page：6 Pages	6.5A,400VHeatsinkN-ChannelTypePowerMOSFET	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司	THINKISEMI
IRF730PBF	文件：3.58963 Mbytes Page：7 Pages	HEXFETPowerMOSFET	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF730PBF	文件：134.68 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技	Vishay
IRF730PBF	文件：156.83 Kbytes Page：8 Pages	PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH	VishayVishay Siliconix 威世科技	Vishay
IRF730S	文件：192.81 Kbytes Page：9 Pages	PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheet	VishayVishay Siliconix 威世科技	Vishay
IRF730S	文件：262.3 Kbytes Page：6 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRF730S	文件：173.99 Kbytes Page：9 Pages	RepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi	VishayVishay Siliconix 威世科技	Vishay
IRF730S	文件：1.42874 Mbytes Page：5 Pages	N-ChannelMOSFET ■Features ●VDS(V)=400V ●ID=5.5A(VGS=10V) ●RDS(ON)	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
IRF730SPBF	文件：893.24 Kbytes Page：8 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
IRFI730B	文件：681.53 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
IRFI730G	文件：1.57493 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl	VishayVishay Siliconix 威世科技	Vishay

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详细参数

型号：
IRF730ASTRRPBF
功能描述：
MOSFET N-Chan 400V 5.5 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鹏和科技有限公司	IRF730ASTRRPBF	IR	24+	D2PAK	5000	全现原装公司现货	询价
深圳市科雨电子有限公司	IRF730ASTRRPBF	VISHAY	1503+	TO-263	3000	就找我吧!--邀您体验愉快问购元件!	询价
深圳市河锋鑫科技有限公司	IRF730ASTRRPBF	Vishay Siliconix	22+	TO2633 D2Pak (2 Leads + Tab) T	9000	原厂渠道,现货配单	询价
深圳市芯福林电子科技有限公司	IRF730ASTRRPBF	Vishay Siliconix	21+	TO2633 D2Pak (2 Leads + Tab) T	13880	公司只售原装,支持实单	询价
深圳市大联智电子有限公司	IRF730ASTRRPBF	Vishay Siliconix	2022+	TO2633 D2Pak (2 Leads + Tab) T	6680	原厂原装，欢迎咨询	询价
深圳市胜彬电子有限公司	IRF730ASTRRPBF	IR	22+	D2PAK	8000	原装正品支持实单	询价
易创佳业科技（深圳）有限公司	IRF730ASTRRPBF	Vishay Siliconix	23+	TO2633 D2Pak (2 Leads + Tab) T	9000	原装正品，支持实单	询价
深圳市鹏顺微电子科技有限公司	IRF730ASTRRPBF	Vishay Siliconix	2022+	TO-263-3,D2Pak(2 引线 + 接片	38550	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市能元时代电子有限公司	IRF730ASTRRPBF	VISHAY	23+	TO-263	62953	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市惊羽科技有限公司	IRF730ASTRRPBF	VISHAY-威世	24+25+/26+27+	TO-263-3	78800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价

更多IRF730ASTRRPBF供应商更新时间2024-5-22 10:20:00

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