6.0A, 400V, 1.0廓 N-CHANNEL POWER MOSFET

DESCRIPTION ➤ IRF730 is 400V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ➤ Advanced termination scheme to provide enhanced voltage-blocking capability; ➤ Avalanche Energy Specified; ➤ Source-to-Drain Diode Recov

文件：365.66 Kbytes 页数：6 Pages

FS

isc N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID=3.5A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) • Fast Switching Speed APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power su

文件：65.269 Kbytes 页数：2 Pages

ISC

无锡固电

6.0A 400V N CHANNEL POWER MOSFET

文件：451.94 Kbytes 页数：3 Pages

FCI

富加宜

Trans MOSFET N-CH 20V 5.2A 8-Pin SOIC T/R

NJS

Mosfet

FCI

富加宜