| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF730B | 400V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
IRF730B | Low Area Specific On-Resistance FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
IRF730B | 400V N-Channel MOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRF730B | N-Channel MOSFET Transistor DESCRIPTION •DrainCurrent–ID=5.5A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowers | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
IRF730B | D Series Power MOSFET FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit( | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
D Series Power MOSFET FEATURES •OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) •OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit( | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
6.0A,400V,1.0廓N-CHANNELPOWERMOSFET DESCRIPTION ➤IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ➤Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ➤AvalancheEnergySpecified; ➤Source-to-DrainDiodeRecov | FS First Silicon Co., Ltd | FS | ||
iscN-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent–ID=3.5A@TC=25℃ •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersu | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
6.0A400VNCHANNELPOWERMOSFET | FCIFirst Components International 戈采戈采企业股份有限公司 | FCI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号：
IRF730B
- 功能描述：
MOSFET 400V N-Channel B-FET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-220 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
FSC |
6200 |
TO-220 |
17 |
100%原装正品现货 |
询价 | ||
FAC |
04+ |
TO-220 |
1000 |
全新原装 绝对有货 |
询价 | ||
IR-CHH |
23+ |
SO8 |
8238 |
询价 | |||
IR |
15+ |
TO-220 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
FAIRCHILD |
2016+ |
TO-220 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
FAIRCHILD |
23+ |
TO220 |
9280 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
FSC |
2020+ |
TO-220 |
6400 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
FSC |
22+ |
TO-220 |
5000 |
全新原装现货!自家库存! |
询价 |
相关规格书
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