400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：898.57 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

Low Area Specific On-Resistance

FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry

文件：293.32 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

D Series Power MOSFET

FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (

文件：173.28 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel MOSFET Transistor

DESCRIPTION • Drain Current –ID=5.5A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.0Ω (Max) • Fast Switching Speed APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power s

文件：201.45 Kbytes 页数：2 Pages

ISC

无锡固电

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：3.10167 Mbytes 页数：9 Pages

KERSEMI

D Series Power MOSFET

FEATURES • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (

文件：173.28 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

D Series Power MOSFET

·Optimal Design\n·Low Area Specific On-Resistance\n·Low Input Capacitance (Ciss);

Vishay

威世