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IRF7413GTRPBF

Generation V Technology

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

7413

PowerMOSFET(Vdss=30V,Id=12A)

SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

7413SYZBE

7000SeriesMiniatureToggleSwitches

CK-COMPONENTS

C&K Components

CK-COMPONENTS

AM7413P

P-Channel100-V(D-S)MOSFET

AnalogPower

Analog Power

AnalogPower

AO7413

20VP-ChannelMOSFET

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AO7413

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO7413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas1.8V,inthesmallSOT323footprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlow

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

AO7413L

P-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAO7413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas1.8V,inthesmallSOT323footprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlow

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOSMD

HD7413

TTLHD74/HD74SSeries

HitachiHitachi, Ltd.

日立公司

Hitachi

IRF7413

PowerMOSFET(Vdss=30V,Id=12A)

SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF7413

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=12A(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

IRF7413

GenerationVTechnology

GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V)

UMWUMW

友台友台半导体

UMW

IRF7413A

PowerMOSFET(Vdss=30V,Rds(on)=0.0135ohm)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF7413GPBF

UltraLowOn-Resistance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF7413PBF

ULTARLOWONRESISTANCE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF7413PBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF7413QPBF

HEXFETPowerMOSFET

Description TheseHEXFET®PowerMOSFETsinSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveaval

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF7413TR

UltraLowOn-Resistance

SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF7413TR

GenerationVTechnology

GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V)

UMWUMW

友台友台半导体

UMW

IRF7413TRPBF

fastsuitching

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRF7413TRPBF

N-Channel20V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

详细参数

  • 型号:

    IRF7413GTRPBF

  • 功能描述:

    MOSFET MOSFT 30V 13A 11mOhm 44nC

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
2016+
SOP8
6528
房间原装进口现货假一赔十
询价
23+
N/A
90350
正品授权货源可靠
询价
IR
2019
8-SO
55000
原装进口假一罚十
询价
IR
20+
SOP-8
43000
原装优势主营型号-可开原型号增税票
询价
IR
2020+
SOP8
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
Infineon Technologies
21+
8-SO
4000
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
INFINEON
1503+
SOP-8
3000
就找我吧!--邀您体验愉快问购元件!
询价
Infineon
22+
NA
2118
加我QQ或微信咨询更多详细信息,
询价
IR
21+
SOP-8
10000
原装现货假一罚十
询价
更多IRF7413GTRPBF供应商 更新时间2024-4-26 10:23:00