N-Channel Power MOSFETs, 5.5A, 350 V/400V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：177.13 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-Channel Power MOSFETs, 5.5 A, 350 V/400 V

Description These devices are n-channol, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VQS Rated at ±20 V • Silicon Gate for Fast Switching Sp

文件：848.7 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

isc N-Channel MOSFET Transistor

文件：64.989 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

文件：2.087889 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and The is the highest performance trench Product requirement with full function reliability a

文件：2.21333 Mbytes 页数：6 Pages

EVVOSEMI

翊欧

丝印：IRF7311；Package：SOP-8；30V 2N-Channel Enhancement Mode MOSFET

General Description The is the highest performance trench 2N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability a

文件：2.087889 Mbytes 页数：6 Pages

UMW

友台半导体

丝印：IRF7313；Package：SOP-8；Dual N Channel MOSFET

Features VDs(V=30V RpsoN)

文件：361.14 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

丝印：IRF7316；Package：SOP-8；Dual P-Channel MOSFET

Features ® Vbs(v)=-30V ® Roson)

文件：392.68 Kbytes 页数：7 Pages

UMW

友台半导体

丝印：IRF7316；Package：SOP-8；Dual P-Channel MOSFET

Features Vs (v)=-30V Rpson)

文件：364.15 Kbytes 页数：7 Pages

EVVOSEMI

翊欧